Tạp chí
 
Năm 2025
 
Số 6 [12 - 2025], Năm thứ XXXIV

Analysis of Electron Transport Coefficients in Gas Mixtures forPlasma Discharge in Semiconductor Etching: A Trend in MiningElectrical Equipment Manufacturing

https://tapchi.hoimovietnam.vn/vi/archives?article=25069

  • Cơ quan:

    1 University of Transport and Communications,3 Cau Giay St., Ha Noi, Vietnam
    2 Hung Yen University of Technology and Education, Viet Tien C., Hung Yen, Vietnam
    3 Lai Chau Power Company, Dien Bien Phu Rd., Lai Chau, Vietnam 4Sao Do University, Chu Van An W., Hai Phong City, Vietnam

  • *Tác giả liên hệ:
    This email address is being protected from spambots. You need JavaScript enabled to view it.
  • Nhận bài: 11-10-2025
  • Sửa xong: 15-11-2025
  • Chấp nhận: 18-11-2025
  • Ngày đăng: 31-12-2025
Trang: 52 - 57
Lượt xem: 169
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Lượt tải: 5
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Tóm tắt:

This study presents the calculation and analysis of electron transport coefficients in gas mixturescomposed of argon (Ar), molecular fluorine (F2), and nitrogen (N2), with a focus on their relevance to gasdischarge applications. Using the BOLSIG+ Boltzmann solver and well-established electron collisioncross-section data, key parameters such as mobility, diffusion coefficients, and ionization coefficients wereevaluated across a range of reduced electric fields (E/N) and mixture ratios. These data serve as criticalinput for the modeling and optimization of low-temperature plasma discharges, particularly in applicationssuch as reactive ion etching and thin film deposition using inductively coupled plasma systems.

Trích dẫn
Hien Xuan Pham, Tuoi Thi Phan, Luong Vi Tran, Hoa Ngoc Le và Diep Thi Pham, 2025. Analysis of Electron Transport Coefficients in Gas Mixtures forPlasma Discharge in Semiconductor Etching: A Trend in MiningElectrical Equipment Manufacturing, Tạp chí Công nghiệp Mỏ, số XXXIV, kỳ 6, tr. 52-57.
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